Abstract
Dark current noise measurements were carried out between 10 and 104 Hz at T = 80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIP's) designed Tor 8-μm infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼7 × 1022 cm-3·s-1) is similar to AIGaAs-GaAs QWIP's with similar peak wavelengths, but the gain is 50× larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.
Original language | English (US) |
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Pages (from-to) | 1124-1128 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 34 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1998 |
Funding
Manuscript received August 25, 1997; revised March 24, 1998. This work was supported in part by the Air Force Office of Scientific Research under Contract F49620-97-1-0288. C. Jelen, S. Slivken, T. David, and M. Razeghi are with the Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208 USA. G. J. Brown is with Wright Laboratories, Materials Directorate, WL/MLPO, Wright Patterson AFB, OH 45433-7707 USA. Publisher Item Identifier S 0018-9197(98)04547-3.
Keywords
- Infrared detectors
- Noise
- Noise measurement
- Photodetectors
- Quantum-well devices
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering