Noise performance of InGaAs - InP quantum-well infrared photodetectors

Christopher Jelen*, Steven Slivken, Thibaut David, Manijeh Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Dark current noise measurements were carried out between 10 and 104 Hz at T = 80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIP's) designed Tor 8-μm infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼7 × 1022 cm-3·s-1) is similar to AIGaAs-GaAs QWIP's with similar peak wavelengths, but the gain is 50× larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.

Original languageEnglish (US)
Pages (from-to)1124-1128
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume34
Issue number7
DOIs
StatePublished - Jul 1998

Keywords

  • Infrared detectors
  • Noise
  • Noise measurement
  • Photodetectors
  • Quantum-well devices

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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