Dark current noise measurements were carried out between 10 and 104 Hz at T = 80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIP's) designed Tor 8-μm infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼7 × 1022 cm-3·s-1) is similar to AIGaAs-GaAs QWIP's with similar peak wavelengths, but the gain is 50× larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.
- Infrared detectors
- Noise measurement
- Quantum-well devices
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering