Non-monotonic effect of growth temperature on carrier collection in SnS solar cells

R. Chakraborty, V. Steinmann, N. M. Mangan, R. E. Brandt, J. R. Poindexter, R. Jaramillo, J. P. Mailoa, K. Hartman, A. Polizzotti, C. Yang, R. G. Gordon, T. Buonassisi

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We quantify the effects of growth temperature on material and device properties of thermally evaporated SnS thin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.

Original languageEnglish (US)
Article number203901
JournalApplied Physics Letters
Volume106
Issue number20
DOIs
StatePublished - May 18 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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