TY - JOUR
T1 - Non-poissonian exciton populations in semiconductor Nanocrystals via carrier multiplication
AU - Schaller, Richard D.
AU - Klimov, Victor I.
PY - 2006/3/13
Y1 - 2006/3/13
N2 - We analyze distributions of exciton populations in PbSe nanocrystal (NC) ensembles as a function of excitation wavelength. For photon energies that result in carrier multiplication, these distributions are non-Poissonian and are characterized by two dominant exciton multiplicities that are determined by the ratio of photon energy to NC energy gap. For certain photon energies, we produce photoexcited NC ensembles with a nearly pure single multiplicity that can be tuned from 1 to 7. This result can find applications ranging from lasing and nonlinear optics to photovoltaics and photocatalysis.
AB - We analyze distributions of exciton populations in PbSe nanocrystal (NC) ensembles as a function of excitation wavelength. For photon energies that result in carrier multiplication, these distributions are non-Poissonian and are characterized by two dominant exciton multiplicities that are determined by the ratio of photon energy to NC energy gap. For certain photon energies, we produce photoexcited NC ensembles with a nearly pure single multiplicity that can be tuned from 1 to 7. This result can find applications ranging from lasing and nonlinear optics to photovoltaics and photocatalysis.
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U2 - 10.1103/PhysRevLett.96.097402
DO - 10.1103/PhysRevLett.96.097402
M3 - Article
C2 - 16606314
AN - SCOPUS:33644784696
SN - 0031-9007
VL - 96
JO - Physical review letters
JF - Physical review letters
IS - 9
M1 - 097402
ER -