Noncontact acoustic wave metrology of SOI substrates

M. Banet; L. P. Allen; K. A. Nelson; M. Fuchs; J. A. Rogers; A. Akthukal; A. Maznev

Noncontact acoustic wave metrology of SOI substrates

M. Banet^*, L. P. Allen, K. A. Nelson, M. Fuchs, J. A. Rogers, A. Akthukal, A. Maznev

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.

Original language	English (US)
Title of host publication	IEEE International SOI Conference
Editors	Anon
Publisher	IEEE
Pages	45-46
Number of pages	2
State	Published - Dec 1 1998
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: Oct 5 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	10/5/98 → 10/8/98

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Noncontact acoustic wave metrology of SOI substrates",

abstract = "The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.",

author = "M. Banet and Allen, {L. P.} and Nelson, {K. A.} and M. Fuchs and Rogers, {J. A.} and A. Akthukal and A. Maznev",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "45--46",

editor = "Anon",

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note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

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T1 - Noncontact acoustic wave metrology of SOI substrates

AU - Banet, M.

AU - Allen, L. P.

AU - Nelson, K. A.

AU - Fuchs, M.

AU - Rogers, J. A.

AU - Akthukal, A.

AU - Maznev, A.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.

AB - The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.

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M3 - Conference contribution

AN - SCOPUS:0032305894

SP - 45

EP - 46

BT - IEEE International SOI Conference

A2 - Anon, null

PB - IEEE

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -

Noncontact acoustic wave metrology of SOI substrates

Abstract

Other

ASJC Scopus subject areas

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