Abstract
The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.
Original language | English (US) |
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Title of host publication | IEEE International SOI Conference |
Editors | Anon |
Publisher | IEEE |
Pages | 45-46 |
Number of pages | 2 |
State | Published - Dec 1 1998 |
Event | Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: Oct 5 1998 → Oct 8 1998 |
Other
Other | Proceedings of the 1998 IEEE International SOI Conference |
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City | Stuart, FL, USA |
Period | 10/5/98 → 10/8/98 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering