Noncontact acoustic wave metrology of SOI substrates

M. Banet*, L. P. Allen, K. A. Nelson, M. Fuchs, J. A. Rogers, A. Akthukal, A. Maznev

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The nondestructive impulsive stimulated thermal scattering (ISTS) method was demonstrated as a promising method for SIMOX (separation by implantation of oxygen) SOI (silicon on insulator) substrate defect evaluation. The photoacoustic method revealed significant differences in the acoustic signal for unannealed vs. annealed substrates and for increasing oxygen doses. Initial correlation to Si dislocation density was found.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
PublisherIEEE
Pages45-46
Number of pages2
StatePublished - Dec 1 1998
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
Duration: Oct 5 1998Oct 8 1998

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period10/5/9810/8/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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