NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes*, J. B. Theeten, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

25 Scopus citations

Abstract

The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

Original languageEnglish (US)
Pages (from-to)1374-1378
Number of pages5
JournalJournal of vacuum science & technology
Volume16
Issue number5
DOIs
StatePublished - Jan 1 1979
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA
Duration: Jan 30 1979Feb 1 1979

ASJC Scopus subject areas

  • Engineering(all)

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