The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1979|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA|
Duration: Jan 30 1979 → Feb 1 1979
ASJC Scopus subject areas