NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes; J. B. Theeten; R. P H Chang

doi:10.1116/1.570202

NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes^*, J. B. Theeten, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

Original language	English (US)
Pages (from-to)	1374-1378
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	16
Issue number	5
DOIs	https://doi.org/10.1116/1.570202
State	Published - 1979
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA Duration: Jan 30 1979 → Feb 1 1979

ASJC Scopus subject areas

General Engineering

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10.1116/1.570202

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@article{193330224f674361a911e1af8c3e6ca1,

title = "NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.",

abstract = "The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.",

author = "Aspnes, {D. E.} and Theeten, {J. B.} and Chang, {R. P H}",

year = "1979",

doi = "10.1116/1.570202",

language = "English (US)",

volume = "16",

pages = "1374--1378",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

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note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th ; Conference date: 30-01-1979 Through 01-02-1979",

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T1 - NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

AU - Aspnes, D. E.

AU - Theeten, J. B.

AU - Chang, R. P H

PY - 1979

Y1 - 1979

N2 - The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

AB - The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

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DO - 10.1116/1.570202

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JF - Journal of vacuum science & technology

IS - 5

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th

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ER -

NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

Abstract

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