Nonlinear reflectance and transmittance of semiconductor periodic structures between 1.3 and 1.6 m

Lukasz Brzozowski*, Vladimir Sukhovatkin, Edward H. Sargent, Anthony SpringThorpe, Marcius Extavour

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The nonlinear response of a periodically nonlinear InGaAs/InAlGaAs optical element is reported from 1.3 μm to 1.6 μm. Near 1.5 μm the structure is optically homogeneous at low intensities, while with increased incident power a Bragg grating appears.

Original languageEnglish (US)
Pages (from-to)640-641
Number of pages2
JournalOSA Trends in Optics and Photonics Series
Volume88
StatePublished - 2003
EventConference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States
Duration: Jun 1 2003Jun 6 2003

ASJC Scopus subject areas

  • Engineering(all)

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