Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

Scott A Barnett; J. Mirecki-Millunchick; Jose G. Labanda; R. Kaspi; L. Hultman

Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

Scott A Barnett^*, J. Mirecki-Millunchick, Jose G. Labanda, R. Kaspi, L. Hultman

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	418-429
Number of pages	12
Volume	2397
ISBN (Print)	0819417440
State	Published - Jan 1 1995
Event	Optoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA Duration: Feb 6 1995 → Feb 9 1995

Other

Other	Optoelectronic Integrated Circuit Materials, Physics, and Devices
City	San Jose, CA, USA
Period	2/6/95 → 2/9/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

@inproceedings{7c3b393592be4f1db2c03ffa975dc987,

title = "Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors",

abstract = "In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.",

author = "Barnett, {Scott A} and J. Mirecki-Millunchick and Labanda, {Jose G.} and R. Kaspi and L. Hultman",

year = "1995",

month = jan,

day = "1",

language = "English (US)",

isbn = "0819417440",

volume = "2397",

pages = "418--429",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",

}

Barnett, SA, Mirecki-Millunchick, J, Labanda, JG, Kaspi, R & Hultman, L 1995, Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2397, Society of Photo-Optical Instrumentation Engineers, pp. 418-429, Optoelectronic Integrated Circuit Materials, Physics, and Devices, San Jose, CA, USA, 2/6/95.

Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors. / Barnett, Scott A; Mirecki-Millunchick, J.; Labanda, Jose G.; Kaspi, R.; Hultman, L.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2397 Society of Photo-Optical Instrumentation Engineers, 1995. p. 418-429.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

AU - Barnett, Scott A

AU - Mirecki-Millunchick, J.

AU - Labanda, Jose G.

AU - Kaspi, R.

AU - Hultman, L.

PY - 1995/1/1

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N2 - In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.

AB - In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.

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