Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

Scott A Barnett*, J. Mirecki-Millunchick, Jose G. Labanda, R. Kaspi, L. Hultman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages418-429
Number of pages12
Volume2397
ISBN (Print)0819417440
StatePublished - Jan 1 1995
EventOptoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA
Duration: Feb 6 1995Feb 9 1995

Other

OtherOptoelectronic Integrated Circuit Materials, Physics, and Devices
CitySan Jose, CA, USA
Period2/6/952/9/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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