TY - GEN
T1 - Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors
AU - Barnett, Scott A.
AU - Mirecki-Millunchick, J.
AU - Labanda, Jose G.
AU - Kaspi, R.
AU - Hultman, L.
PY - 1995
Y1 - 1995
N2 - In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.
AB - In this paper, recent results on the use of low-energy ions in molecular beam epitaxy are described. Mechanisms for ion damage formation are discussed and conditions where ion irradiation can be used without introducing damage are reported. Three main applications are discussed. First, the use of ions to suppress 3D island nucleation during the early stages of strained-layer growth is presented, with particular attention paid to the ion- induced prevention of extended defect formation and strain relaxation. The current understanding of the mechanisms by which ion irradiation affects nucleation is also summarized. Second, ion-induced suppression of phase separation in InGaAsSb alloys during growth on lattice-matched to InP substrates is described. Third, the application of very-low-energy (≈ 50 eV) and glancing-angle 1 keV Ar ions to damage-free sputter cleaning and etching of GaAs is discussed.
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U2 - 10.1117/12.206892
DO - 10.1117/12.206892
M3 - Conference contribution
AN - SCOPUS:0029223384
SN - 0819417440
SN - 9780819417442
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 418
EP - 429
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
T2 - Optoelectronic Integrated Circuit Materials, Physics, and Devices
Y2 - 6 February 1995 through 9 February 1995
ER -