Novel cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron systems

M. Grayson*, Ç Kurdak, D. C. Tsui, S. Parihar, S. Lyon, M. Shayegan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report the fabrication of novel electron in-plane tunneling systems in GaAs/AlxGa1-xAs using the technique of cleaved edge overgrowth, and report results of tunneling measurements into both one- and two-dimensional (1D and 2D) systems. Our devices demonstrate tunneling through an abrupt molecular beam epitaxially defined barrier where the shape of the barrier potential is exactly known. We study three different in-plane tunneling geometries, namely 2D-1D-2D, 2D-2D and 2D-3D, and report current vs voltage characteristics for all three geometries.

Original languageEnglish (US)
Pages (from-to)233-236
Number of pages4
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - Jan 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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