TY - GEN
T1 - Novel dielectric materials for organic electronics
AU - Facchetti, Antonio
AU - Yoon, Myung Han
AU - Yan, He
AU - Marks, Tobin J.
PY - 2005
Y1 - 2005
N2 - We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (< IV), without serious leakage currents (< 10 A/cm at IV).
AB - We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (< IV), without serious leakage currents (< 10 A/cm at IV).
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U2 - 10.1557/proc-871-i6.6
DO - 10.1557/proc-871-i6.6
M3 - Conference contribution
AN - SCOPUS:34249982943
SN - 155899825X
SN - 9781558998254
T3 - Materials Research Society Symposium Proceedings
SP - 177
EP - 182
BT - Organic Thin-Film Electronics
PB - Materials Research Society
T2 - 2005 MRS Spring Meeting
Y2 - 28 March 2005 through 1 April 2005
ER -