Abstract
A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.
Original language | English (US) |
---|---|
Pages (from-to) | 1922-1924 |
Number of pages | 3 |
Journal | Review of Scientific Instruments |
Volume | 67 |
Issue number | 5 |
DOIs | |
State | Published - May 1996 |
ASJC Scopus subject areas
- Instrumentation