Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation

Y. C. Kim; M. J. Nowakowski; D. N. Seidman

doi:10.1063/1.1146997

Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation

Y. C. Kim^*, M. J. Nowakowski, D. N. Seidman

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

Original language	English (US)
Pages (from-to)	1922-1924
Number of pages	3
Journal	Review of Scientific Instruments
Volume	67
Issue number	5
DOIs	https://doi.org/10.1063/1.1146997
State	Published - May 1996

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Instrumentation

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abstract = "A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.",

author = "Kim, {Y. C.} and Nowakowski, {M. J.} and Seidman, {D. N.}",

year = "1996",

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N2 - A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

AB - A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

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Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation

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