Abstract
A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1922-1924 |
| Number of pages | 3 |
| Journal | Review of Scientific Instruments |
| Volume | 67 |
| Issue number | 5 |
| DOIs | |
| State | Published - Jan 1 1996 |
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ASJC Scopus subject areas
- Instrumentation
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Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation. / Kim, Y. C.; Nowakowski, M. J.; Seidman, David N.
In: Review of Scientific Instruments, Vol. 67, No. 5, 01.01.1996, p. 1922-1924.Research output: Contribution to journal › Article
TY - JOUR
T1 - Novel in situ cleavage technique for cross-sectional scanning tunneling microscopy sample preparation
AU - Kim, Y. C.
AU - Nowakowski, M. J.
AU - Seidman, David N
PY - 1996/1/1
Y1 - 1996/1/1
N2 - A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.
AB - A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip exchange capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.
UR - http://www.scopus.com/inward/record.url?scp=0343437488&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343437488&partnerID=8YFLogxK
U2 - 10.1063/1.1146997
DO - 10.1063/1.1146997
M3 - Article
VL - 67
SP - 1922
EP - 1924
JO - Review of Scientific Instruments
JF - Review of Scientific Instruments
SN - 0034-6748
IS - 5
ER -