Novel InTlSb alloy for uncooled long-wavelength infrared photodetectors

J. J. Lee*, J. D. Kim, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, we report on the growth and characterization of novel InTlSb alloys for uncooled long-wavelength infrared photodetector applications. The InTlSb epilayers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Tl into InSb was investigated in detail with Auger electron spectroscopy, high-resolution x-ray diffraction, transmission, absorption, photoresponse measurements, and Hall effect measurements. We also demonstrate the photodetectors fabricated from the grown InTlSb alloys. Photoresponse of InTlSb photodetectors is observed up to 11 μm at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a Johnson noise limited detectivity of 7.64×108 cmHz1/2W-1. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. The present results showed the feasibility of using InTlSb alloys for the uncooled infrared photodetector applications.

Original languageEnglish (US)
Pages (from-to)19-28
Number of pages10
JournalOpto-electronics Review
Volume7
Issue number1
StatePublished - Jan 1 1999

Keywords

  • InTlSb photodetectors
  • Photoconductors
  • Uncooled infrared detectors

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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