Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl1Ba2Ca2Cu3O9+x

Richard J. McNeely, J. A. Belot, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf, X. F. Zhang, D. J. Miller, Tobin J. Marks*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Thin films of Tl1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet, and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep = methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TlF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc > 104 A/cm2 (77 K, 0 T) and at low temperatures retain Jc > 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.

Original languageEnglish (US)
Pages (from-to)133-134
Number of pages2
JournalJournal of Superconductivity
Issue number1
StatePublished - 1998


  • Fluoride
  • Thin films
  • Tl-1223

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)


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