Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl1Ba2Ca2Cu3O9+x

Richard J. McNeely; J. A. Belot; J. L. Schindler; M. P. Chudzik; C. R. Kannewurf; X. F. Zhang; D. J. Miller; Tobin J. Marks

doi:10.1023/A:1022635424576

Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl₁Ba₂Ca₂Cu₃O_9+x

Richard J. McNeely, J. A. Belot, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf, X. F. Zhang, D. J. Miller, Tobin J. Marks^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Thin films of Tl₁Ba₂Ca₂Cu₃O_9+x have been grown on single crystal (110) LaAlO₃ by a metal-organic chemical vapor deposition process employing Ba(hfa)_2.mep, Ca(hfa)_2.tet, and Cu(dpm)₂ (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep = methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TlF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured T_c = 103 K and J_c > 10⁴ A/cm² (77 K, 0 T) and at low temperatures retain J_c > 10⁵ A/cm² (5 K, 4.5 T) as measured by magnetic hysteresis.

Original language	English (US)
Pages (from-to)	133-134
Number of pages	2
Journal	Journal of Superconductivity
Volume	11
Issue number	1
DOIs	https://doi.org/10.1023/A:1022635424576
State	Published - 1998

Keywords

Fluoride
MOCVD
Thin films
Tl-1223

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Physics and Astronomy (miscellaneous)

Access to Document

10.1023/A:1022635424576

Cite this

@article{aca37c6c455c4bf696390cba044a290e,

title = "Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl1Ba2Ca2Cu3O9+x",

abstract = "Thin films of Tl1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet, and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep = methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TlF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc > 104 A/cm2 (77 K, 0 T) and at low temperatures retain Jc > 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.",

keywords = "Fluoride, MOCVD, Thin films, Tl-1223",

author = "McNeely, {Richard J.} and Belot, {J. A.} and Schindler, {J. L.} and Chudzik, {M. P.} and Kannewurf, {C. R.} and Zhang, {X. F.} and Miller, {D. J.} and Marks, {Tobin J.}",

year = "1998",

doi = "10.1023/A:1022635424576",

language = "English (US)",

volume = "11",

pages = "133--134",

journal = "Journal of Superconductivity",

issn = "0896-1107",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl1Ba2Ca2Cu3O9+x

AU - McNeely, Richard J.

AU - Belot, J. A.

AU - Schindler, J. L.

AU - Chudzik, M. P.

AU - Kannewurf, C. R.

AU - Zhang, X. F.

AU - Miller, D. J.

AU - Marks, Tobin J.

PY - 1998

Y1 - 1998

N2 - Thin films of Tl1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet, and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep = methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TlF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc > 104 A/cm2 (77 K, 0 T) and at low temperatures retain Jc > 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.

AB - Thin films of Tl1Ba2Ca2Cu3O9+x have been grown on single crystal (110) LaAlO3 by a metal-organic chemical vapor deposition process employing Ba(hfa)2.mep, Ca(hfa)2.tet, and Cu(dpm)2 (hfa = hexafluoroacetylacetonate; dpm = dipivaloylmethanate; tet = tetraglyme; mep = methylethylpentaglyme) as the volatile metal sources. A subsequent phase-selective annealing procedure accomplishes thallination using TlF in a bulk oxide pellet. The resulting films are nearly phase-pure and highly oriented and contain negligible fluoride by windowless energy-dispersive x-ray measurements. The films exhibit transport measured Tc = 103 K and Jc > 104 A/cm2 (77 K, 0 T) and at low temperatures retain Jc > 105 A/cm2 (5 K, 4.5 T) as measured by magnetic hysteresis.

KW - Fluoride

KW - MOCVD

KW - Thin films

KW - Tl-1223

UR - http://www.scopus.com/inward/record.url?scp=0031999280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031999280&partnerID=8YFLogxK

U2 - 10.1023/A:1022635424576

DO - 10.1023/A:1022635424576

M3 - Article

AN - SCOPUS:0031999280

SN - 0896-1107

VL - 11

SP - 133

EP - 134

JO - Journal of Superconductivity

JF - Journal of Superconductivity

IS - 1

ER -