Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan; S. Sundaram; Y. El Gmili; P. L. Voss; K. Pantzas; T. Moudakir; A. Ougazzaden; D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; P. Bove; K. Prior; R. McClintock; M. Razeghi

doi:10.1117/12.2043704

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers^*, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices V
Publisher	SPIE
ISBN (Print)	9780819499004
DOIs	https://doi.org/10.1117/12.2043704
State	Published - 2014
Event	5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States Duration: Feb 2 2014 → Feb 5 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8987
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	5th Annual Oxide Based Materials and Devices Conference
Country/Territory	United States
City	San Francisco, CA
Period	2/2/14 → 2/5/14

Keywords

Chemical lift-off
GaN
LED
Reclaim
Substrate
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2043704

Cite this

Rajan, A., Sundaram, S., El Gmili, Y., Voss, P. L., Pantzas, K., Moudakir, T., Ougazzaden, A., Rogers, D. J., Hosseini Teherani, F., Sandana, V. E., Bove, P., Prior, K., McClintock, R., & Razeghi, M. (2014). Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. In Oxide-Based Materials and Devices V Article 898719 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8987). SPIE. https://doi.org/10.1117/12.2043704

@inproceedings{769708b09a474bf4aa50ebbd874f8fc4,

title = "Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers",

abstract = "Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.",

keywords = "Chemical lift-off, GaN, LED, Reclaim, Substrate, ZnO",

author = "A. Rajan and S. Sundaram and {El Gmili}, Y. and Voss, {P. L.} and K. Pantzas and T. Moudakir and A. Ougazzaden and Rogers, {D. J.} and {Hosseini Teherani}, F. and Sandana, {V. E.} and P. Bove and K. Prior and R. McClintock and M. Razeghi",

year = "2014",

doi = "10.1117/12.2043704",

language = "English (US)",

isbn = "9780819499004",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Oxide-Based Materials and Devices V",

note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",

}

Rajan, A, Sundaram, S, El Gmili, Y, Voss, PL, Pantzas, K, Moudakir, T, Ougazzaden, A, Rogers, DJ, Hosseini Teherani, F, Sandana, VE, Bove, P, Prior, K, McClintock, R & Razeghi, M 2014, Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers. in Oxide-Based Materials and Devices V., 898719, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8987, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United States, 2/2/14. https://doi.org/10.1117/12.2043704

TY - GEN

T1 - Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

AU - Rajan, A.

AU - Sundaram, S.

AU - El Gmili, Y.

AU - Voss, P. L.

AU - Pantzas, K.

AU - Moudakir, T.

AU - Ougazzaden, A.

AU - Rogers, D. J.

AU - Hosseini Teherani, F.

AU - Sandana, V. E.

AU - Bove, P.

AU - Prior, K.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2014

Y1 - 2014

N2 - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

AB - Free-standing (0002)-oriented GaN substrates (φ = 2) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

KW - Chemical lift-off

KW - GaN

KW - LED

KW - Reclaim

KW - Substrate

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84901749627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901749627&partnerID=8YFLogxK

U2 - 10.1117/12.2043704

DO - 10.1117/12.2043704

M3 - Conference contribution

AN - SCOPUS:84901749627

SN - 9780819499004

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices V

PB - SPIE

T2 - 5th Annual Oxide Based Materials and Devices Conference

Y2 - 2 February 2014 through 5 February 2014

ER -

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Abstract

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Keywords

ASJC Scopus subject areas

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