Novel photoanode architectures and tunneling barriers

Thomas W. Hamann; Alex B F Martinson; Jeffrey W. Elam; Michael J. Pellin; Joseph T Hupp

Novel photoanode architectures and tunneling barriers

Thomas W. Hamann^*, Alex B F Martinson, Jeffrey W. Elam, Michael J. Pellin, Joseph T Hupp

^*Corresponding author for this work

Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

Original language	English (US)
Title of host publication	234th ACS National Meeting, Abstracts of Scientific Papers
State	Published - Dec 31 2007
Event	234th ACS National Meeting - Boston, MA, United States Duration: Aug 19 2007 → Aug 23 2007

Other

Other	234th ACS National Meeting
Country/Territory	United States
City	Boston, MA
Period	8/19/07 → 8/23/07

ASJC Scopus subject areas

Chemistry(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{5e24de4cd9e744f9bf111724429f008b,

title = "Novel photoanode architectures and tunneling barriers",

abstract = "Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.",

author = "Hamann, {Thomas W.} and Martinson, {Alex B F} and Elam, {Jeffrey W.} and Pellin, {Michael J.} and Hupp, {Joseph T}",

year = "2007",

month = dec,

day = "31",

language = "English (US)",

isbn = "0841269556",

booktitle = "234th ACS National Meeting, Abstracts of Scientific Papers",

note = "234th ACS National Meeting ; Conference date: 19-08-2007 Through 23-08-2007",

}

TY - GEN

T1 - Novel photoanode architectures and tunneling barriers

AU - Hamann, Thomas W.

AU - Martinson, Alex B F

AU - Elam, Jeffrey W.

AU - Pellin, Michael J.

AU - Hupp, Joseph T

PY - 2007/12/31

Y1 - 2007/12/31

N2 - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

AB - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

UR - http://www.scopus.com/inward/record.url?scp=37349012695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37349012695&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:37349012695

SN - 0841269556

SN - 9780841269552

BT - 234th ACS National Meeting, Abstracts of Scientific Papers

T2 - 234th ACS National Meeting

Y2 - 19 August 2007 through 23 August 2007

ER -

Novel photoanode architectures and tunneling barriers

Abstract

Other

ASJC Scopus subject areas

UN SDGs

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