Novel photoanode architectures and tunneling barriers

Thomas W. Hamann*, Alex B F Martinson, Jeffrey W. Elam, Michael J. Pellin, Joseph T Hupp

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

Original languageEnglish (US)
Title of host publication234th ACS National Meeting, Abstracts of Scientific Papers
StatePublished - Dec 31 2007
Event234th ACS National Meeting - Boston, MA, United States
Duration: Aug 19 2007Aug 23 2007


Other234th ACS National Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Chemistry(all)


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