@inproceedings{86848cc634e94b8a8ac32920af5101c3,
title = "Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire",
abstract = "GaN was grown on ZnO-buffered c-sapphire (c-Al 2O 3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al 2O 3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm 2 of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.",
keywords = "(In)GaN, Chemical Lift-off, Direct Wafer Bonding, Glass Substrate, LED, Multijunction Photovoltaic, Selective Wet Etching, ZnO",
author = "Rogers, {D. J.} and A. Ougazzaden and Sandana, {V. E.} and T. Moudakir and A. Ahaitouf and Teherani, {F. Hosseini} and S. Gautier and L. Goubert and Davidson, {I. A.} and Prior, {K. A.} and McClintock, {R. P.} and P. Bove and Drouhin, {H. J.} and M. Razeghi",
year = "2012",
month = mar,
day = "23",
doi = "10.1117/12.916013",
language = "English (US)",
isbn = "9780819489067",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Oxide-Based Materials and Devices III",
note = "Oxide-Based Materials and Devices III ; Conference date: 22-01-2012 Through 25-01-2012",
}