Novel Sb-based alloys for uncooled infrared photodetector applications

Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled longwavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Bi and Tl in InSb was investigated with high-resolution x-ray diffraction, energy dispersive x-ray analysis, and optical photoresponse measurements. We also demonstrate the photodetectors fabricated from the grown InSbBi and InTlSb alloys. InSb0.96Bi0.04 photoconductive detectors exhibited a responsivity of 3.2 V/W at 77 K. The estimated Johnson noise limited detectivity at 7 μm was 1.7×108 cmHz1/2/W at 7 A room temperature operating InSb0.95Bi0.05 photodetector was also demonstrated. Photoresponse up to 12 μm was achieved at 300 K. The responsivity and Johnson noise-limited detectivity at 10.6 μm were 1.9 mV/W and 1.2×106 cmHz1/2/W, respectively. Photoresponse up to 15 μm was achieved at 300 K from quaternary InTlAsSb and InBiAsSb alloys.

Original languageEnglish (US)
Pages (from-to)304-315
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4288
DOIs
StatePublished - Jan 1 2001
EventPhotodetectors: Materials and Devices VI - San Jose, CA, United States
Duration: Jan 22 2001Jan 24 2001

Keywords

  • IR
  • InBiAsSb
  • InSbBi
  • InTlAsSb
  • InTlP
  • InTlSb
  • Photodetectors
  • Room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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