Abstract
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled longwavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Bi and Tl in InSb was investigated with high-resolution x-ray diffraction, energy dispersive x-ray analysis, and optical photoresponse measurements. We also demonstrate the photodetectors fabricated from the grown InSbBi and InTlSb alloys. InSb0.96Bi0.04 photoconductive detectors exhibited a responsivity of 3.2 V/W at 77 K. The estimated Johnson noise limited detectivity at 7 μm was 1.7×108 cmHz1/2/W at 7 A room temperature operating InSb0.95Bi0.05 photodetector was also demonstrated. Photoresponse up to 12 μm was achieved at 300 K. The responsivity and Johnson noise-limited detectivity at 10.6 μm were 1.9 mV/W and 1.2×106 cmHz1/2/W, respectively. Photoresponse up to 15 μm was achieved at 300 K from quaternary InTlAsSb and InBiAsSb alloys.
Original language | English (US) |
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Pages (from-to) | 304-315 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4288 |
DOIs | |
State | Published - Jan 1 2001 |
Event | Photodetectors: Materials and Devices VI - San Jose, CA, United States Duration: Jan 22 2001 → Jan 24 2001 |
Keywords
- IR
- InBiAsSb
- InSbBi
- InTlAsSb
- InTlP
- InTlSb
- Photodetectors
- Room temperature
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering