Novel Sb-based materials for uncooled infrared photodetector applications

J. J. Lee, Manijeh Razeghi

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We have developed low-pressure metalorganic chemical vapor deposition technology for the growth of novel III-V Sb-based compounds such as InTlSb, InTlAsSb, and InSbBi. The incorporation of Tl and Bi is investigated with various characterization techniques. Preliminary infrared photodetectors based on these materials are fabricated and tested. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a Johnson-noise-limited detectivity of about 7.64×108 cm Hz1/2/W. Photoresponse of the In0.94Tl0.06Sb photodetector has been extended to 11 μm at 300 K. Infrared photoresponse up to 15 μm is achieved from the InTlAsSb alloy at room temperature. We also demonstrate the uncooled InSbBi photodetector operating in the 8-12 μm range. The voltage responsivity at 10.6 μm is about 1.9 mV/W at 300 K and the corresponding Johnson-noise-limited detectivity is 1.2×106 cm Hz1/2/W. The carrier lifetime is estimated to be 0.7 ns.

Original languageEnglish (US)
Pages (from-to)444-449
Number of pages6
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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