In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
|Original language||English (US)|
|Number of pages||3|
|Journal||Gaojishu Tongxin/High Technology Letters|
|State||Published - Dec 1 1998|
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