Novel semiconductor integrated superluminescent source

Yongsheng Zhao*, Guotong Du, Xiuying Jiang, Gregory Devane, Weihua Han, Xuemei Li, Junfeng Song, Dingsan Gao, Kathleen A. Stuir, P. R H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.

Original languageEnglish (US)
Pages (from-to)5-7
Number of pages3
JournalGaojishu Tongxin/High Technology Letters
Volume8
Issue number1
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Engineering(all)

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