Nuclear and ion spins in semiconductor nanostructures

M. Poggio, R. C. Myers, G. M. Steeves, N. P. Stern, A. C. Gossard, D. D. Awschalom*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Spin interactions are studied between conduction band electrons in GaAs heterostructures and local moments, specifically the spins of constituent lattice nuclei and of partially filled electronic shells of impurity atoms. Nuclear spin polarizations are addressed through the contact hyperfine interaction resulting in the development of a method for high-field optically detected nuclear magnetic resonance sensitive to 108 nuclei. This interaction is then used to generate nuclear spin polarization profiles within a single parabolic quantum well; the position of these nanometer-scale sheets of polarized nuclei can be shifted along the growth direction using an externally applied electric field. In order to directly investigate ion spin dynamics, doped GaMnAs quantum wells are fabricated in the regime of very low Mn concentrations. Measurements of coherent electron spin dynamics show an antiferromagnetic exchange between s-like conduction band electrons and electrons localized in the d-shell of the Mn impurities, which varies as a function of well width.

Original languageEnglish (US)
Pages (from-to)264-271
Number of pages8
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume35
Issue number2
DOIs
StatePublished - Dec 1 2006

Keywords

  • Dilute magnetic semiconductors
  • Dynamic nuclear polarization
  • GaMnAs
  • ODNMR
  • Quantum well

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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