Numerical and analytic methods for the study of disordered alloy surfaces

X. Zhang*, M. Hwang, A. Gonis, Arthur J Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report exact, numerically simulated, and analytic calculations of the density of states (DOS) at or near the surface of semi-infinite substitutionally disordered alloys in the tight-binding approximation to the Hamiltonian. The exact DOS is obtained through a recursion method, which is applicable to systems of any dimensionality, and yields results which possess the desirable analytic and convergence properties. Both the surface generalization of the coherent-potential approximation (CPA) and of the embedded-cluster method (ECM) are used to calculate averaged and partial DOS s and to compare them with the exact results. As is the case with bulk alloys, the CPA yields a smooth overall description of the exact spectra, while the ECM properly reproduces much of the structure of the DOS even when used with relatively small clusters of atoms. A discussion of the work and its possible utility is given.

Original languageEnglish (US)
Pages (from-to)5169-5176
Number of pages8
JournalPhysical Review B
Issue number8
StatePublished - Jan 1 1986

ASJC Scopus subject areas

  • Condensed Matter Physics


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