Numerical investigation of channel width variation in junctionless transistors performance

Arash Dehzangi, Farhad Larki, Burhanuddin Y. Majlis, M. N. Hamidon, P. Susthitha Menon, Azman Jalar, Md Shabiul Islam, Sawal Hamid Md Ali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously fabricated. In this letter, the impact of channel width variation on behaviour of the device is studied by means of 3D-TCAD simulation tool. In this matter, the transfer characteristics, energy band diagram (valence/conduction band) and normal electric field along the nanowire between the source and the drain are studied at pinch off state. By decreasing the nanowire width, the on current decreases. Threshold voltage also reduced by decreasing the wire width. The highest electric field occurs at off state and the normal component of the electric field is stronger for smaller channel width. At pinch off state, the energy band diagrams revealed that a potential barrier against the current flow was built in channel which the smallest width has higher potential barrier. The overall result agrees with the behaviour of the nanowire junctionless transistors.

Original languageEnglish (US)
Title of host publicationProceedings - RSM 2013
Subtitle of host publication2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages101-104
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi, Malaysia
Duration: Sep 25 2013Sep 27 2013

Publication series

NameProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CountryMalaysia
CityLangkawi
Period9/25/139/27/13

Keywords

  • Lateral gate Junctionless transistor
  • TCAD simulation
  • channel width effect
  • energy band diagram

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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