TY - GEN
T1 - Numerical study of side gate junction-less transistor in on state
AU - Dehzangi, Arash
AU - Larki, Farhad
AU - Majlis, Burhanuddin Y.
AU - Hamidon, M. N.
AU - Navasery, Manizheh
AU - Gharibshahi, Elham
AU - Khalilzadeh, Nasrin
AU - Vakilian, Mohammadmahdi
AU - Saion, Elias B.
PY - 2013
Y1 - 2013
N2 - Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in on state for zero gate voltage in depletion mode. Negative gate voltage drives the device into on state, but unable to make significant effect on drain current as accmulation mode. Simulation results for valence band energy, electric field and hole density are investigated along the active regions. The influence of the electric field due to the applied voltages of VDS and VG on charge distribution is much more when the device operates at the saturation region. The hole quasi-Fermi level has a positive slope showing the current flows from source to drain.
AB - Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in on state for zero gate voltage in depletion mode. Negative gate voltage drives the device into on state, but unable to make significant effect on drain current as accmulation mode. Simulation results for valence band energy, electric field and hole density are investigated along the active regions. The influence of the electric field due to the applied voltages of VDS and VG on charge distribution is much more when the device operates at the saturation region. The hole quasi-Fermi level has a positive slope showing the current flows from source to drain.
KW - Side gate Junctionless Transistors (SGJLT)
KW - hole density distribution
KW - valence band energy
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U2 - 10.1109/RSM.2013.6706575
DO - 10.1109/RSM.2013.6706575
M3 - Conference contribution
AN - SCOPUS:84893525847
SN - 9781479911837
T3 - Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
SP - 398
EP - 401
BT - Proceedings - RSM 2013
T2 - 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
Y2 - 25 September 2013 through 27 September 2013
ER -