Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

Sevdenur Arpaci, Victor Lopez-Dominguez*, Jiacheng Shi, Luis Sánchez-Tejerina, Francesca Garesci, Chulin Wang, Xueting Yan, Vinod K. Sangwan, Matthew A. Grayson, Mark C. Hersam, Giovanni Finocchio*, Pedram Khalili Amiri*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

Original languageEnglish (US)
Article number3828
JournalNature communications
Issue number1
StatePublished - Dec 1 2021

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology


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