Observation of intercalation of excess oxygen in Bi2Sr 2CaCu2O8+y single crystal

G. S. Shekhawat*, Ram P. Gupta, A. Agarwal, P. D. Vyas, P. Srivastava, N. L. Saini, S. Venkatesh, K. B. Garg

*Corresponding author for this work

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1 Scopus citations

Abstract

Effects arising from the intercalation of excess oxygen in Bi-O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi-O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi-O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum.

Original languageEnglish (US)
Pages (from-to)3343
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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