Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

X. Zhang*, D. Walker, A. Saxler, P. Kung, J. Xu, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2eV-1 from capacitance-voltage and conductance-voltage measurements.

Original languageEnglish (US)
Pages (from-to)1622-1623
Number of pages2
JournalElectronics Letters
Volume32
Issue number17
DOIs
StatePublished - Jan 1 1996

Keywords

  • Aluminium compounds
  • Chemical vapour deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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