Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

X. Zhang; D. Walker; A. Saxler; P. Kung; J. Xu; M. Razeghi

doi:10.1049/el:19961061

Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

X. Zhang^*, D. Walker, A. Saxler, P. Kung, J. Xu, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 10¹¹ cm-²eV^-1 from capacitance-voltage and conductance-voltage measurements.

Original language	English (US)
Pages (from-to)	1622-1623
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	17
DOIs	https://doi.org/10.1049/el:19961061
State	Published - 1996

Keywords

Aluminium compounds
Chemical vapour deposition

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19961061

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title = "Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition",

abstract = "AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2eV-1 from capacitance-voltage and conductance-voltage measurements.",

keywords = "Aluminium compounds, Chemical vapour deposition",

author = "X. Zhang and D. Walker and A. Saxler and P. Kung and J. Xu and M. Razeghi",

year = "1996",

doi = "10.1049/el:19961061",

language = "English (US)",

volume = "32",

pages = "1622--1623",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

AU - Zhang, X.

AU - Walker, D.

AU - Saxler, A.

AU - Kung, P.

AU - Xu, J.

AU - Razeghi, M.

PY - 1996

Y1 - 1996

N2 - AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2eV-1 from capacitance-voltage and conductance-voltage measurements.

AB - AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2eV-1 from capacitance-voltage and conductance-voltage measurements.

KW - Aluminium compounds

KW - Chemical vapour deposition

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U2 - 10.1049/el:19961061

DO - 10.1049/el:19961061

M3 - Article

AN - SCOPUS:0030214888

SN - 0013-5194

VL - 32

SP - 1622

EP - 1623

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition

Abstract

Keywords

ASJC Scopus subject areas

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