AlN has been grown on Si(111) substrates by metal organic chemical vapour deposition. The formation of an inversion layer on n-type Si(111) has been clearly observed by capacitance-voltage measurements at high and low frequencies. The interface trap level density was calculated to be in the range of 1011 cm-2eV-1 from capacitance-voltage and conductance-voltage measurements.
|Original language||English (US)|
|Number of pages||2|
|State||Published - 1996|
- Aluminium compounds
- Chemical vapour deposition
ASJC Scopus subject areas
- Electrical and Electronic Engineering