Observation of quantum size effect in the resistivity of thin, gray tin epilayers

Li Wei Tu*, George K. Wong, John B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.

Original languageEnglish (US)
Pages (from-to)1327-1329
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number13
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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