Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1989|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)