Observation of quantum size effect in the resistivity of thin, gray tin epilayers

Li Wei Tu; George K. Wong; John B. Ketterson

doi:10.1063/1.101645

Observation of quantum size effect in the resistivity of thin, gray tin epilayers

Li Wei Tu^*, George K. Wong, John B. Ketterson

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.

Original language	English (US)
Pages (from-to)	1327-1329
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	13
DOIs	https://doi.org/10.1063/1.101645
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Observation of quantum size effect in the resistivity of thin, gray tin epilayers",

abstract = "Thin, gray tin films, with thicknesses from 50 to 375 {\AA}, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.",

author = "Tu, {Li Wei} and Wong, {George K.} and Ketterson, {John B.}",

year = "1989",

doi = "10.1063/1.101645",

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pages = "1327--1329",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Observation of quantum size effect in the resistivity of thin, gray tin epilayers

AU - Tu, Li Wei

AU - Wong, George K.

AU - Ketterson, John B.

PY - 1989

Y1 - 1989

N2 - Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.

AB - Thin, gray tin films, with thicknesses from 50 to 375 Å, have been grown on (001) CdTe wafers by the molecular beam epitaxy technique. Resistivity measurements in the intrinsic region show a thickness-dependent band gap. Quantum size effect theory using a square well potential has been used to interpret the experimental data.

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U2 - 10.1063/1.101645

DO - 10.1063/1.101645

M3 - Article

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SN - 0003-6951

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SP - 1327

EP - 1329

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Observation of quantum size effect in the resistivity of thin, gray tin epilayers

Abstract

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