Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping

X. Zhang*, P. Kung, A. Saxler, D. Walker, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Optically pumped surface-emitting stimulated emission at room temperature was observed from GaN:Ge grown by metalorganic chemical vapor deposition. The sample was optically pumped perpendicularly on the top surface while the stimulated emission was collected from the back colinearly with the pump beam. The cavity was formed by the GaN/air and GaN/sapphire interfaces without any other structure. The stimulated emission was gain guided by the pump beam. The threshold optical pump density for stimulated emission was approximately 2.8 MW/cm2 and the linewidth was 2.5 nm. The emission from GaN:Ge showed a redshift as the pump density increased. The comparison between theoretical calculations and experimental results suggested that many-body interactions can account well for the redshift.

Original languageEnglish (US)
Pages (from-to)6544-6546
Number of pages3
JournalJournal of Applied Physics
Volume80
Issue number11
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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