Ohmic-Contact-Gated Carbon Nanotube Transistors for High-Performance Analog Amplifiers

William A. Gaviria Rojas, Megan E. Beck, Vinod K. Sangwan, Silu Guo, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The growing demand for ubiquitous data collection has driven the development of sensing technologies with local data processing. As a result, solution-processed semiconductors are widely employed due to their compatibility with low-cost additive manufacturing on a wide range of substrates. However, to fully realize their potential in sensing applications, high-performance scalable analog amplifiers must be realized. Here, ohmic-contact-gated transistors (OCGTs) based on solution-processed semiconducting single-walled carbon nanotubes are introduced to address this unmet need. This new device concept enables output current saturation in the short-channel limit without compromising output current drive. The resulting OCGTs are used in common-source amplifiers to achieve the highest width-normalized output current (≈30 µA µm–1) and length-scaled signal gain (≈230 µm–1) to date for solution-processed semiconductors. The utility of these amplifiers for emerging sensing technologies is demonstrated by the amplification of complex millivolt-scale analog biological signals including the outputs of electromyography, photoplethysmogram, and accelerometer sensors. Since the OCGT design is compatible with other solution-processed semiconducting materials, this work establishes a general route to high-performance, solution-processed analog electronics.

Original languageEnglish (US)
Article number2100994
JournalAdvanced Materials
Issue number34
StatePublished - Aug 26 2021


  • biological sensors
  • field-effect transistors
  • self-alignment
  • short channels
  • solution processing

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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