Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

Fang Ou*, D. Bruce Buchholz, Fei Yi, Boyang Liu, Chunhan Hseih, R P H Chang, Seng-Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.

Original languageEnglish (US)
Pages (from-to)1341-1345
Number of pages5
JournalACS Applied Materials and Interfaces
Volume3
Issue number4
DOIs
StatePublished - Apr 27 2011

Keywords

  • CdO
  • III-V semiconductor
  • Ohmic contact
  • PLD
  • TCO
  • surface pretreatment

ASJC Scopus subject areas

  • Materials Science(all)

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