Abstract
Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.
Original language | English (US) |
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Pages (from-to) | 1341-1345 |
Number of pages | 5 |
Journal | ACS Applied Materials and Interfaces |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - Apr 27 2011 |
Keywords
- CdO
- III-V semiconductor
- Ohmic contact
- PLD
- TCO
- surface pretreatment
ASJC Scopus subject areas
- Materials Science(all)