Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

Fang Ou; D. Bruce Buchholz; Fei Yi; Boyang Liu; Chunhan Hseih; R P H Chang; Seng-Tiong Ho

doi:10.1021/am2001357

Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

Fang Ou^*, D. Bruce Buchholz, Fei Yi, Boyang Liu, Chunhan Hseih, R P H Chang, Seng-Tiong Ho

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10^-6 AZAcm² are obtained.

Original language	English (US)
Pages (from-to)	1341-1345
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	3
Issue number	4
DOIs	https://doi.org/10.1021/am2001357
State	Published - Apr 27 2011

Keywords

CdO
III-V semiconductor
Ohmic contact
PLD
TCO
surface pretreatment

ASJC Scopus subject areas

Materials Science(all)

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10.1021/am2001357

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title = "Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide",

abstract = "Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.",

keywords = "CdO, III-V semiconductor, Ohmic contact, PLD, TCO, surface pretreatment",

author = "Fang Ou and Buchholz, {D. Bruce} and Fei Yi and Boyang Liu and Chunhan Hseih and Chang, {R P H} and Seng-Tiong Ho",

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T1 - Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

AU - Ou, Fang

AU - Buchholz, D. Bruce

AU - Yi, Fei

AU - Liu, Boyang

AU - Hseih, Chunhan

AU - Chang, R P H

AU - Ho, Seng-Tiong

PY - 2011/4/27

Y1 - 2011/4/27

N2 - Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.

AB - Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ±2.8) ×10-6 AZAcm2 are obtained.

KW - CdO

KW - III-V semiconductor

KW - Ohmic contact

KW - PLD

KW - TCO

KW - surface pretreatment

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JF - ACS applied materials & interfaces

SN - 1944-8244

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ER -

Ohmic contact of cadmium oxide, a transparent conducting oxide, to n-type indium phosphide

Abstract

Keywords

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