Ohmic contact of indium oxide as transparent electrode to n-type indium phosphide

Xiufeng Tang*, Chunhan Hseih, Fang Ou, Seng-Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Ohmic contacts of n-type indium phosphide (n-InP) with indium oxide (In2O3), a transparent conducting oxide (TCO), have been achieved. Hydrogen plasma surface pretreatment of the n-InP substrates (H2-cleaned n-InP) prior to the deposition of In2O3 films, is the key to achieve Ohmic contact. Oxygen flow rate during the In2O3 film deposition, which equivalently determines its doping level, is the main tuning parameter for In2O3 thin films growth. Rapid thermal annealing process (RTP) at different temperatures was found to have little effects on the Ohmic contact type. This journal is

Original languageEnglish (US)
Pages (from-to)22685-22691
Number of pages7
JournalRSC Advances
Volume5
Issue number29
DOIs
StatePublished - Jan 1 2015

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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