Keyphrases
Gallium Arsenide
100%
Ni-P
100%
Ohmic Contact
100%
In2O3 Films
100%
ZnO-SnO2
100%
Annealing Process
42%
Oxygen Flow Rate
42%
Contact Annealing
42%
GaAs Substrate
28%
Thermal Stability
14%
As-deposited
14%
Annealing
14%
Semiconductor Substrate
14%
Film Growth
14%
High Conductivity
14%
High Thermal Stability
14%
Indium Oxide
14%
Ion Beam Assisted Deposition
14%
Interfacial Contact
14%
Oxygen Plasma
14%
InP Substrate
14%
Contact Properties
14%
Hydrogen Plasma
14%
Low Optical Loss
14%
Tuning Parameter
14%
Specific Contact Resistivity
14%
Proper Temperature
14%
Material Science
Gallium Arsenide
100%
ZnO
100%
Film
100%
Thermal Stability
22%
Electrical Resistivity
11%
Ion Beam Assisted Deposition
11%
Optical Loss
11%
Film Growth
11%