Double tunnel junctions Sn-I-Sn-I-Sn with a very low-impedance generator have been studied. I-V characteristic of the generator displays instability at V approximately equals 2 DELTA /e below T lambda which results in the appearance of inhomogeneous state in a tin film. It has been found that a weak parallel magnetic field, H approximately equals IOO G, can completely suppress both instability and inhomogeneous state.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Number of pages||2|
|State||Published - Dec 1 1984|
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