Abstract
Double tunnel junctions Sn-I-Sn-I-Sn with a very low-impedance generator have been studied. I-V characteristic of the generator displays instability at V approximately equals 2 DELTA /e below T lambda which results in the appearance of inhomogeneous state in a tin film. It has been found that a weak parallel magnetic field, H approximately equals IOO G, can completely suppress both instability and inhomogeneous state.
Original language | English (US) |
---|---|
Title of host publication | Unknown Host Publication Title |
Publisher | North-Holland |
Pages | 799-800 |
Number of pages | 2 |
Edition | pt 2 |
ISBN (Print) | 0444869107 |
State | Published - Dec 1 1984 |
Externally published | Yes |
Publication series
Name | |
---|---|
Number | pt 2 |
ASJC Scopus subject areas
- General Engineering