On the Description of the Collision Terms in Three-Valley Hydrodynamic Models for GaAs Device Modeling

Cengiz Besikci, Manijeh Razeghi

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A reduced set of transport parameters is proposed for the collision terms of the three-valley hydrodynamic model which is a faster alternative to ensemble Monte Carlo simulations. The predictions of the proposed model have been found to be in excellent agreement with transient ensemble Monte Carlo data. The reduction in the number of the transport parameters makes the model relatively easy to implement with substantial accuracy. The transport parameters which are of interest in semiclassical device modeling are presented as a function of electron energy.

Original languageEnglish (US)
Pages (from-to)1471-1475
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume41
Issue number8
DOIs
StatePublished - Jan 1 1994

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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