The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.
|Original language||English (US)|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|State||Published - Jan 1 2001|
ASJC Scopus subject areas
- Materials Science(all)