On the reliable analysis of indium mole fraction within In xGa1-xN quantum wells using atom probe tomography

James R. Riley; Theeradetch Detchprohm; Christian Wetzel; Lincoln J. Lauhon

doi:10.1063/1.4871510

On the reliable analysis of indium mole fraction within In _xGa_1-xN quantum wells using atom probe tomography

James R. Riley, Theeradetch Detchprohm, Christian Wetzel, Lincoln J. Lauhon

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of In_xGa_{1- x}N m-plane, c-plane, and (202̄1̄) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in In_xGa_{1- x}N quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

Original language	English (US)
Article number	152102
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871510
State	Published - Apr 14 2014

Funding

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4871510

Cite this

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title = "On the reliable analysis of indium mole fraction within In xGa1-xN quantum wells using atom probe tomography",

abstract = "Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1- xN m-plane, c-plane, and (20{\=2}{\=1}) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1- xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.",

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T1 - On the reliable analysis of indium mole fraction within In xGa1-xN quantum wells using atom probe tomography

AU - Riley, James R.

AU - Detchprohm, Theeradetch

AU - Wetzel, Christian

AU - Lauhon, Lincoln J.

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1- xN m-plane, c-plane, and (202̄1̄) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1- xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

AB - Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1- xN m-plane, c-plane, and (202̄1̄) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1- xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

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