On the reliable analysis of indium mole fraction within In xGa1-xN quantum wells using atom probe tomography

James R. Riley, Theeradetch Detchprohm, Christian Wetzel, Lincoln J. Lauhon

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1- xN m-plane, c-plane, and (202̄1̄) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1- xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

Original languageEnglish (US)
Article number152102
JournalApplied Physics Letters
Issue number15
StatePublished - Apr 14 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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