On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm

Omer Gokalp Memis; Alex Katsnelson; Hooman Mohseni; Minjun Yan; Shuang Zhang; Tim Hossain; Niu Jin; Ilesanmi Adesida

doi:10.1109/LED.2008.2001123

On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm

Omer Gokalp Memis^*, Alex Katsnelson, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.

Original language	English (US)
Pages (from-to)	867-869
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2001123
State	Published - Aug 2008

Keywords

Jitter
Lateral transport
Nanoinjection
Photon detector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2001123

Cite this

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title = "On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm",

abstract = "The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.",

keywords = "Jitter, Lateral transport, Nanoinjection, Photon detector",

author = "Memis, {Omer Gokalp} and Alex Katsnelson and Hooman Mohseni and Minjun Yan and Shuang Zhang and Tim Hossain and Niu Jin and Ilesanmi Adesida",

note = "Funding Information: Manuscript received March 25, 2008. The work of H. Mohseni was supported in part by the National Science Foundation and in part by the Defense Advanced Research Projects Agency. The work of I. Adesida was supported by the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor P. K.-L. Yu.",

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AU - Memis, Omer Gokalp

AU - Katsnelson, Alex

AU - Mohseni, Hooman

AU - Yan, Minjun

AU - Zhang, Shuang

AU - Hossain, Tim

AU - Jin, Niu

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received March 25, 2008. The work of H. Mohseni was supported in part by the National Science Foundation and in part by the Defense Advanced Research Projects Agency. The work of I. Adesida was supported by the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2008/8

Y1 - 2008/8

N2 - The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.

AB - The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.

KW - Jitter

KW - Lateral transport

KW - Nanoinjection

KW - Photon detector

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On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm

Abstract

Keywords

ASJC Scopus subject areas

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