On the source of jitter in a room-temperature nanoinjection photon detector at 1.55 μm

Omer Gokalp Memis*, Alex Katsnelson, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The transient response of a nanoinjection infrared photon detector was studied by exploring the relation between lateral charge transfer and jitter. The jitter of the device was measured to be 15 ps at room temperature. The jitter was almost independent of the pulse power, even after device saturation. Spatial maps for delay and amplitude were acquired. The carrier velocity was extracted from the measurements and compared with that of the simulation model. The jitter due to transit time was calculated to be in agreement with the measured data, which indicated that the jitter is primarily transit time limited.

Original languageEnglish (US)
Pages (from-to)867-869
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
StatePublished - Aug 2008

Funding

Manuscript received March 25, 2008. The work of H. Mohseni was supported in part by the National Science Foundation and in part by the Defense Advanced Research Projects Agency. The work of I. Adesida was supported by the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor P. K.-L. Yu.

Keywords

  • Jitter
  • Lateral transport
  • Nanoinjection
  • Photon detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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