One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

K. Kern*, T. Demel, D. Heitmann, P. Grambow, K. Ploog, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.

Original languageEnglish (US)
Pages (from-to)256-259
Number of pages4
JournalSurface Science
Volume229
Issue number1-3
DOIs
StatePublished - Apr 2 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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