One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

K. Kern; T. Demel; D. Heitmann; P. Grambow; K. Ploog; M. Razeghi

doi:10.1016/0039-6028(90)90883-A

One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

K. Kern^*, T. Demel, D. Heitmann, P. Grambow, K. Ploog, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.

Original language	English (US)
Pages (from-to)	256-259
Number of pages	4
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90883-A
State	Published - Apr 2 1990

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90883-A

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@article{4f19e39c866141d78c95fb6a4d66c672,

title = "One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires",

abstract = "Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.",

author = "K. Kern and T. Demel and D. Heitmann and P. Grambow and K. Ploog and M. Razeghi",

year = "1990",

month = apr,

day = "2",

doi = "10.1016/0039-6028(90)90883-A",

language = "English (US)",

volume = "229",

pages = "256--259",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

AU - Kern, K.

AU - Demel, T.

AU - Heitmann, D.

AU - Grambow, P.

AU - Ploog, K.

AU - Razeghi, M.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.

AB - Quantum wire structures have been prepared by deep mesa etching of modulation doped InGaAs-InAlAs-InP heterostructures. In very narrow wires (width t ≈ 300 nm) it was possible to realize one-dimensional electronic systems (IDES) with quantum confined energy levels. The separation of the ID subbands was, as determined from magnetic depopulation, about 2.5 meV.

UR - http://www.scopus.com/inward/record.url?scp=44949287204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949287204&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90883-A

DO - 10.1016/0039-6028(90)90883-A

M3 - Article

AN - SCOPUS:44949287204

SN - 0039-6028

VL - 229

SP - 256

EP - 259

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires

Abstract

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