Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Li J. Wang*, Sheng L. Wu, Jaqueline Diaz, Ivan Eliashevich, H. J. Yi, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The operating characteristics of Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well high power laser grown by low-pressure metalorganic chemical vapor deposition are reported. The internal differential quantum efficiency η i is closed 98 percent. The external differential quantum efficiency η d of 75 percent and characteristics temperature T o of 146 degrees C are achieved, CW total output power both facets of 2.6 W single quantum well laser with 100 μm width, 1.1 mm cavity length is obtained. Threshold current density J th, reciprocal differential quantum efficiency l/η d, emission wavelength λ and characteristics temperature T o as function of laser cavity length L respectively have been measured and researched. Dependence of J th (T), λ (T), and η d (T) respectively on temperature T have been given and explained.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsSiamak Forouhar, Qiming Wang
Pages114-117
Number of pages4
StatePublished - Dec 1 1996
EventSemiconductor Lasers II - Beijing, China
Duration: Nov 6 1996Nov 7 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2886

Other

OtherSemiconductor Lasers II
CityBeijing, China
Period11/6/9611/7/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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