Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff; C. Jelen; S. Slivken; Gail J. Brown; Manijeh Razeghi

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff^*, C. Jelen, S. Slivken, Gail J. Brown, Manijeh Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga _0.79In _0.21As _0.59P _0.41 wells and Ga _0.62In _0.38As _0.22P _0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gail J. Brown, Manijeh Razeghi
Pages	62-71
Number of pages	10
State	Published - Jan 1 1996
Event	Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2685
ISSN (Print)	0277-786X

Other

Other	Photodetectors: Materials and Devices
City	San Jose, CA, USA
Period	2/1/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Hoff, J. R., Jelen, C., Slivken, S., Brown, G. J., & Razeghi, M. (1996). Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. In G. J. Brown, & M. Razeghi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 62-71). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2685).

Hoff, James R. ; Jelen, C. ; Slivken, S. ; Brown, Gail J. ; Razeghi, Manijeh. / Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. Proceedings of SPIE - The International Society for Optical Engineering. editor / Gail J. Brown ; Manijeh Razeghi. 1996. pp. 62-71 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{6441620a8a784cde81c0f2d3d712e5fb,

title = "Optical absorption and photoresponse in fully quaternary p-type quantum well detectors",

abstract = "Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga 0.79In 0.21As 0.59P 0.41 wells and Ga 0.62In 0.38As 0.22P 0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.",

author = "Hoff, {James R.} and C. Jelen and S. Slivken and Brown, {Gail J.} and Manijeh Razeghi",

year = "1996",

month = jan,

day = "1",

language = "English (US)",

isbn = "081942059X",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "62--71",

editor = "Brown, {Gail J.} and Manijeh Razeghi",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Photodetectors: Materials and Devices ; Conference date: 01-02-1996 Through 02-02-1996",

}

Hoff, JR, Jelen, C, Slivken, S, Brown, GJ & Razeghi, M 1996, Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2685, pp. 62-71, Photodetectors: Materials and Devices, San Jose, CA, USA, 2/1/96.

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. / Hoff, James R.; Jelen, C.; Slivken, S.; Brown, Gail J.; Razeghi, Manijeh.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gail J. Brown; Manijeh Razeghi. 1996. p. 62-71 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2685).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

AU - Hoff, James R.

AU - Jelen, C.

AU - Slivken, S.

AU - Brown, Gail J.

AU - Razeghi, Manijeh

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga 0.79In 0.21As 0.59P 0.41 wells and Ga 0.62In 0.38As 0.22P 0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

AB - Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga 0.79In 0.21As 0.59P 0.41 wells and Ga 0.62In 0.38As 0.22P 0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Brown, Gail J.

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