Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff*, C. Jelen, S. Slivken, Gail J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga 0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages10
ISBN (Print)081942059X, 9780819420596
StatePublished - 1996
EventPhotodetectors: Materials and Devices - San Jose, CA, USA
Duration: Feb 1 1996Feb 2 1996


OtherPhotodetectors: Materials and Devices
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Optical absorption and photoresponse in fully quaternary p-type quantum well detectors'. Together they form a unique fingerprint.

Cite this