Abstract
Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga 0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 62-71 |
Number of pages | 10 |
Volume | 2685 |
ISBN (Print) | 081942059X, 9780819420596 |
DOIs | |
State | Published - 1996 |
Event | Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996 |
Other
Other | Photodetectors: Materials and Devices |
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City | San Jose, CA, USA |
Period | 2/1/96 → 2/2/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering