Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff; C. Jelen; S. Slivken; Gail J. Brown; Manijeh Razeghi

doi:10.1117/12.237713

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff^*, C. Jelen, S. Slivken, Gail J. Brown, Manijeh Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga_0.79In_0.21As_0.59P_0.41 wells and Ga_0.62In_0.38As_0.22P_0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	62-71
Number of pages	10
Volume	2685
ISBN (Print)	081942059X, 9780819420596
DOIs	https://doi.org/10.1117/12.237713
State	Published - 1996
Event	Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996

Other

Other	Photodetectors: Materials and Devices
City	San Jose, CA, USA
Period	2/1/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.237713

Cite this

@inproceedings{6441620a8a784cde81c0f2d3d712e5fb,

title = "Optical absorption and photoresponse in fully quaternary p-type quantum well detectors",

abstract = "Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga 0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.",

author = "Hoff, {James R.} and C. Jelen and S. Slivken and Brown, {Gail J.} and Manijeh Razeghi",

year = "1996",

doi = "10.1117/12.237713",

language = "English (US)",

isbn = "081942059X",

volume = "2685",

pages = "62--71",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Photodetectors: Materials and Devices ; Conference date: 01-02-1996 Through 02-02-1996",

}

Hoff, JR, Jelen, C, Slivken, S, Brown, GJ & Razeghi, M 1996, Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2685, Society of Photo-Optical Instrumentation Engineers, pp. 62-71, Photodetectors: Materials and Devices, San Jose, CA, USA, 2/1/96. https://doi.org/10.1117/12.237713

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors. / Hoff, James R.; Jelen, C.; Slivken, S. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2685 Society of Photo-Optical Instrumentation Engineers, 1996. p. 62-71.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

AU - Hoff, James R.

AU - Jelen, C.

AU - Slivken, S.

AU - Brown, Gail J.

AU - Razeghi, Manijeh

PY - 1996

Y1 - 1996

N2 - Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga 0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

AB - Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga 0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

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DO - 10.1117/12.237713

M3 - Conference contribution

AN - SCOPUS:0029699335

SN - 081942059X

SN - 9780819420596

VL - 2685

SP - 62

EP - 71

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Photodetectors: Materials and Devices

Y2 - 1 February 1996 through 2 February 1996

ER -

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

Abstract

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ASJC Scopus subject areas

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