Optical absorption and photoresponse in fully quaternary p-type quantum well detectors

James R. Hoff*, C. Jelen, S. Slivken, Gail J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga 0.79In 0.21As 0.59P 0.41 wells and Ga 0.62In 0.38As 0.22P 0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 μm up to 10 μm. To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 × 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
Pages62-71
Number of pages10
StatePublished - Jan 1 1996
EventPhotodetectors: Materials and Devices - San Jose, CA, USA
Duration: Feb 1 1996Feb 2 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2685
ISSN (Print)0277-786X

Other

OtherPhotodetectors: Materials and Devices
CitySan Jose, CA, USA
Period2/1/962/2/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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