Abstract
Single-crystal metastable (GaAs)1-x(Ge2)x alloys with 0<x<1 have been grown on (100) GaAs substrates by use of ultrahigh-vacuum ion-beam sputter deposition. Optical-absorption measurements showed that the direct gap E0 exhibited a large negative V-shaped bowing as a function of x with a minimum E0 0.5 eV near x=0.3. A zinc-blende to diamond-lattice order-disorder transition model is proposed as a possible explanation for these results.
Original language | English (US) |
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Pages (from-to) | 1466-1469 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 50 |
Issue number | 19 |
DOIs | |
State | Published - 1983 |
ASJC Scopus subject areas
- Physics and Astronomy(all)