Single-crystal metastable (GaAs)1-x(Ge2)x alloys with 0<x<1 have been grown on (100) GaAs substrates by use of ultrahigh-vacuum ion-beam sputter deposition. Optical-absorption measurements showed that the direct gap E0 exhibited a large negative V-shaped bowing as a function of x with a minimum E0 0.5 eV near x=0.3. A zinc-blende to diamond-lattice order-disorder transition model is proposed as a possible explanation for these results.
ASJC Scopus subject areas
- Physics and Astronomy(all)