OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GaxIn1 - xAs (0. 44 less than x less than 0. 49) GROWN BY LIQUID PHASE EPITAXY, VAPOR PHASE EPITAXY AND METAL ORGANIC CHEMICAL VAPOR DEPOSITION.

K. H. Goetz*, D. Bimberg, H. Jürgensen, J. Selders, A. V. Solomonov, G. F. Glinskii, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

267 Scopus citations

Abstract

Optical, crystallographic, and transport properties of nominally undoped n-type and Zn doped p-type Ga//xIn//1// minus //xAs/InP grown by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and metal organic chemical vapor deposition (MOCVD) have been studied and related to the different growth methods. Samples grown by LPE show in general much larger luminescence intensities than the VPE samples with similar impurity concentration and less structural and compositional inhomogeneities. Peaks related to free and bound excitons and to different impurities are found in the photoluminescence and absorption spectra of the undoped samples. Data on donor-acceptor pair transitions observed in the photoluminescence spectra are combined with secondary ion mass spectrometry data to identify for the first time different acceptors: C, Zn, and Si. The Zn doped p-type samples show a broad donor-Zn-acceptor pair transition band accompanied by a weak LO-phonon replica and a very weak exciton line.

Original languageEnglish (US)
Pages (from-to)4543-4552
Number of pages10
JournalJournal of Applied Physics
Volume54
Issue number8
DOIs
StatePublished - Jan 1 1983

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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