This paper deals with two optical characterization techniques of semiconductors. Both techniques are based on the study of the variation of the reflection coefficient with the polarization of the incident beam. The first one is ellipsometry, an already well-tried technique widely used to study optical properties of a wide range of materials and thin films. The second one we call Reflectance Difference Spectroscopy (RDS) is more recent. The present study contains the first results obtained by RDS on a MOCVD reactor in realistic growth conditions, that are very promising.
|Translated title of the contribution||Optical characterization of III-IV semiconductors by ellipsometry and Reflectance Difference Spectroscopy|
|Number of pages||49|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Sep 1 1991|
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