Abstract
We design and theoretically evaluate the performance of a novel distributed feedback (DFB) laser-on-thin-film-silicon through its coupling coefficient, threshold current, and slope efficiency. In the DFB laser-on-thin-film-silicon, the optical mode is confined and guided by the narrow III-V-based epi-layers, resulting in an optical field confinement of ∼15\%$. Hence, through the variation of the width of the epi-layers, the optical mode-overlap with the gratings etched on the silicon could be changed. This changes the coupling coefficient of the DFB laser, providing a superior flexibility in reducing the threshold current and increasing the slope efficiency of the laser by ∼ 3× to 4×, in comparison with the previous work on DFB laser-on-silicon.
Original language | English (US) |
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Article number | 6497499 |
Pages (from-to) | 944-947 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 25 |
Issue number | 10 |
DOIs | |
State | Published - 2013 |
Keywords
- Distributed feedback structure
- laser
- silicon evanescent platform
- silicon photonics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering