Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

F. Omnes*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga0.51In0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with Lz=90 Å and L B=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.

Original languageEnglish (US)
Pages (from-to)1034-1036
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number9
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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