Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

F. Omnes; M. Razeghi

doi:10.1063/1.106336

Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

F. Omnes^*, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga_0.51In_0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with L_z=90 Å and L _B=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.

Original language	English (US)
Pages (from-to)	1034-1036
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	9
DOIs	https://doi.org/10.1063/1.106336
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition",

abstract = "Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga0.51In0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with Lz=90 {\AA} and L B=100 {\AA} is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.",

author = "F. Omnes and M. Razeghi",

year = "1991",

doi = "10.1063/1.106336",

language = "English (US)",

volume = "59",

pages = "1034--1036",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

AU - Omnes, F.

AU - Razeghi, M.

PY - 1991

Y1 - 1991

N2 - Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga0.51In0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with Lz=90 Å and L B=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.

AB - Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs-Ga0.51In0.49P lattice-matched quantum wells and superlattices are discussed. The full width at half maximum of a 10-period GaAs-GaInP superlattice with Lz=90 Å and L B=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light-hole and electron to heavy-hole transitions. The GaInP-GaAs interface suffers from memory effect of In, rather than P or As elements.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition

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