Optical properties and non linearities in multiple quantum well structures

J. P. Pocholle; M. Razeghi; J. P. Hirtz; J. P. Schnell; J. Raffy; B. Guyon; M. Papuchon; C. Puech; P. Dandria; H. Vanderstichel

doi:10.1117/12.943530

Optical properties and non linearities in multiple quantum well structures

J. P. Pocholle, M. Razeghi, J. P. Hirtz, J. P. Schnell, J. Raffy, B. Guyon, M. Papuchon, C. Puech, P. Dandria, H. Vanderstichel

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.

Original language	English (US)
Pages (from-to)	134-143
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	864
DOIs	https://doi.org/10.1117/12.943530
State	Published - Jun 2 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{5d0fa0edfb3241f09090243e0931a926,

title = "Optical properties and non linearities in multiple quantum well structures",

abstract = "The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.",

author = "Pocholle, {J. P.} and M. Razeghi and Hirtz, {J. P.} and Schnell, {J. P.} and J. Raffy and B. Guyon and M. Papuchon and C. Puech and P. Dandria and H. Vanderstichel",

note = "Funding Information: This work was partially supported by Direction des Recherches Etudes et Techniques (DRET) and in part by RACE program (Project 1019) from the EEC.",

year = "1988",

month = jun,

day = "2",

doi = "10.1117/12.943530",

language = "English (US)",

volume = "864",

pages = "134--143",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

Optical properties and non linearities in multiple quantum well structures. / Pocholle, J. P.; Razeghi, M.; Hirtz, J. P.; Schnell, J. P.; Raffy, J.; Guyon, B.; Papuchon, M.; Puech, C.; Dandria, P.; Vanderstichel, H.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 864, 02.06.1988, p. 134-143.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Optical properties and non linearities in multiple quantum well structures

AU - Pocholle, J. P.

AU - Razeghi, M.

AU - Hirtz, J. P.

AU - Schnell, J. P.

AU - Raffy, J.

AU - Guyon, B.

AU - Papuchon, M.

AU - Puech, C.

AU - Dandria, P.

AU - Vanderstichel, H.

N1 - Funding Information: This work was partially supported by Direction des Recherches Etudes et Techniques (DRET) and in part by RACE program (Project 1019) from the EEC.

PY - 1988/6/2

Y1 - 1988/6/2

N2 - The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.

AB - The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.

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