Optical properties and non linearities in multiple quantum well structures

J. P. Pocholle, M. Razeghi, J. P. Hirtz, J. P. Schnell, J. Raffy, B. Guyon, M. Papuchon, C. Puech, P. Dandria, H. Vanderstichel

Research output: Contribution to journalArticlepeer-review

Abstract

The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.

Original languageEnglish (US)
Pages (from-to)134-143
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume864
DOIs
StatePublished - Jun 2 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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