Abstract
The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.
Original language | English (US) |
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Pages (from-to) | 134-143 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 864 |
DOIs | |
State | Published - Jun 2 1988 |
Funding
This work was partially supported by Direction des Recherches Etudes et Techniques (DRET) and in part by RACE program (Project 1019) from the EEC.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering