Abstract
Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of Ec - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 1016 cm2. Trap concentrations in the range 1016-1017 cm-3 were measured in the as-grown material.
Original language | English (US) |
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Pages (from-to) | 251-258 |
Number of pages | 8 |
Journal | Thin Solid Films |
Volume | 102 |
Issue number | 3 |
DOIs | |
State | Published - Apr 22 1983 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry