Optical properties of deep centers in semi-insulating ZnSe

E. J. Bawolek; B. W. Wessels

doi:10.1016/0040-6090(83)90092-5

Optical properties of deep centers in semi-insulating ZnSe

E. J. Bawolek^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of E_c - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 10¹⁶ cm². Trap concentrations in the range 10¹⁶-10¹⁷ cm^-3 were measured in the as-grown material.

Original language	English (US)
Pages (from-to)	251-258
Number of pages	8
Journal	Thin Solid Films
Volume	102
Issue number	3
DOIs	https://doi.org/10.1016/0040-6090(83)90092-5
State	Published - Apr 22 1983

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(83)90092-5

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@article{e1702a7ac7624b6ea8677db5b6723006,

title = "Optical properties of deep centers in semi-insulating ZnSe",

abstract = "Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of Ec - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 1016 cm2. Trap concentrations in the range 1016-1017 cm-3 were measured in the as-grown material.",

author = "Bawolek, {E. J.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported in part by the Ceramics Program of the Division of Basic Energy Sciences, U.S. Department of Energy, under Contract DE-ACO2-79ER 10390. Optical measurements were performed in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573. A grant of optical equipment by the University Research Committee is gratefully acknowledged.",

year = "1983",

month = apr,

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doi = "10.1016/0040-6090(83)90092-5",

language = "English (US)",

volume = "102",

pages = "251--258",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Optical properties of deep centers in semi-insulating ZnSe

AU - Bawolek, E. J.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported in part by the Ceramics Program of the Division of Basic Energy Sciences, U.S. Department of Energy, under Contract DE-ACO2-79ER 10390. Optical measurements were performed in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573. A grant of optical equipment by the University Research Committee is gratefully acknowledged.

PY - 1983/4/22

Y1 - 1983/4/22

N2 - Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of Ec - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 1016 cm2. Trap concentrations in the range 1016-1017 cm-3 were measured in the as-grown material.

AB - Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of Ec - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 1016 cm2. Trap concentrations in the range 1016-1017 cm-3 were measured in the as-grown material.

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JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 3

ER -

Optical properties of deep centers in semi-insulating ZnSe

Abstract

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