Optical properties of deep centers in semi-insulating ZnSe

E. J. Bawolek*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Properties of deep levels in vapor-deposited ZnSe on GaAs have been investigated using transient photocurrent and steady state photocapacitance measurements. A metal/insulator/semiconductor structure was used in the study in which ZnSe formed the insulator. A single dominant deep level in the ZnSe having an energy of Ec - 1.2 eV was observed over the spectral region 0.5-3.0 eV. The photoionization cross section of the trap at 1.5 eV and 295 K is 7 x 1016 cm2. Trap concentrations in the range 1016-1017 cm-3 were measured in the as-grown material.

Original languageEnglish (US)
Pages (from-to)251-258
Number of pages8
JournalThin Solid Films
Volume102
Issue number3
DOIs
StatePublished - Apr 22 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Optical properties of deep centers in semi-insulating ZnSe'. Together they form a unique fingerprint.

Cite this