Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Yu Hua Qu; De Sheng Jiang; Donghai Wu; Zhi Chuan Niu; Zheng Sun

doi:10.1088/0256-307X/22/8/073

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Yu Hua Qu, De Sheng Jiang, Donghai Wu, Zhi Chuan Niu, Zheng Sun

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In_0.42Ga_0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

Original language	English (US)
Pages (from-to)	2088-2091
Number of pages	4
Journal	Chinese Physics Letters
Volume	22
Issue number	8
DOIs	https://doi.org/10.1088/0256-307X/22/8/073
State	Published - Aug 1 2005

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/0256-307X/22/8/073

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title = "Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance",

abstract = "Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.",

author = "Qu, {Yu Hua} and Jiang, {De Sheng} and Donghai Wu and Niu, {Zhi Chuan} and Zheng Sun",

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doi = "10.1088/0256-307X/22/8/073",

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TY - JOUR

T1 - Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

AU - Qu, Yu Hua

AU - Jiang, De Sheng

AU - Wu, Donghai

AU - Niu, Zhi Chuan

AU - Sun, Zheng

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

AB - Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

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EP - 2091

JO - Chinese Physics Letters

JF - Chinese Physics Letters

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ER -

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

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