Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Yu Hua Qu, De Sheng Jiang, Donghai Wu, Zhi Chuan Niu, Zheng Sun

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In 0.42Ga 0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

Original languageEnglish (US)
Pages (from-to)2088-2091
Number of pages4
JournalChinese Physics Letters
Volume22
Issue number8
DOIs
StatePublished - Aug 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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