Abstract
The optical emission characteristics of highly strained InAs/InP single quantum wells prepared using atmospheric-pressure organometallic vapor-phase epitaxy have been studied. For well thicknesses of one to three monolayers (ML), the photoluminescence (PL) spectra exhibited intense emission in the energy range 1.15-1.3 eV, with typical full width at half maximum of 8-14 meV. The dependence of PL emission energy on well thickness for 1-5-ML-thick wells was compared with the results of a finite-well calculation, taking into account the effects of strain on the band structure. Good agreement between experiment and theory was obtained for a valence-band offset of 270 meV, consistent with recent reports for the InAs/InP system.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 405-408 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 70 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1991 |
ASJC Scopus subject areas
- General Physics and Astronomy