Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxy

R. P. Schneider*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The optical emission characteristics of highly strained InAs/InP single quantum wells prepared using atmospheric-pressure organometallic vapor-phase epitaxy have been studied. For well thicknesses of one to three monolayers (ML), the photoluminescence (PL) spectra exhibited intense emission in the energy range 1.15-1.3 eV, with typical full width at half maximum of 8-14 meV. The dependence of PL emission energy on well thickness for 1-5-ML-thick wells was compared with the results of a finite-well calculation, taking into account the effects of strain on the band structure. Good agreement between experiment and theory was obtained for a valence-band offset of 270 meV, consistent with recent reports for the InAs/InP system.

Original languageEnglish (US)
Pages (from-to)405-408
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number1
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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