The optical properties of InAsP InP and InAs InAsP strained-layer heterostructures were studied. Photoluminescence emission from InAsxP1-x single quantum wells with thicknesses 2-16 nm was observed in the energy range 0.9-1.4 eV. Full width at half maximum of the PL peaks was 12-25 meV for the thinnest walls. The observed energy shifts were in excellent agreement with theoretical predictions using a finite-well model and taking strain effects into account. InAsxP1-x InP SLS structures with periods of 2-19 nm exhibited emission in the energy range 0.8-1.3 eV. Higher energy transitions were studied by photoconductivity. Infrared transmission measurements on InAs InAs0.84P0.16 strained layer superlattices showed an absorption edge about 30meV higher in energy than the InAs bandgap.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering